Hamza, Akroum, Laboratoire d’Automatique Appliquée, Université M’Hamed Bougara de Boumerdes, Algeria

• Vol 67, No 4 (2021) - Microelectronics, nanoelectronics
  Double-gate MOSFET model implemented in VerilogAMS language for the transient simulation and the configuration of ultra low-power analog circuits
  Abstract  PDF

International Journal of Electronics and Telecommunications
is a periodical of Electronics and Telecommunications Committee
of Polish Academy of Sciences

eISSN: 2300-1933