Billel, Smaani, Ingénierie des Systémes Electriques Department, Faculty of Technology, Boumerdes Laboratoire Hyperfréquences et Semiconducteurs, Electronique Department, Constantine 1 University, Algeria

• Vol 67, No 4 (2021) - Microelectronics, nanoelectronics
  Double-gate MOSFET model implemented in VerilogAMS language for the transient simulation and the configuration of ultra low-power analog circuits
  Abstract  PDF

International Journal of Electronics and Telecommunications
is a periodical of Electronics and Telecommunications Committee
of Polish Academy of Sciences

eISSN: 2300-1933