A New Design Methodology For Enhancing The Transient Loading Of Low Drop-out Regulators (LDRs)

Authors

  • Mohamed Bakry El_Mashade Electrical Engineering Dept., Al_Azhar University, Nasr City, Cairo, Egypt http://orcid.org/0000-0002-1852-3286
  • Ahmed Abd_Monem Afifi Department of Electrical Engineering and computer, Higher Technological Institute, 10th of Ramadan city, Egypt
  • Tayel Dabbous Department of Electrical Engineering and computer, Higher Technological Institute, 10th of Ramadan city, Egypt

Abstract

A new simple design methodology which makes LDR output nearly insensitive to jumps of the load current for long times is proposed. This methodology is tested for more than 104 seconds. Our procedure leans on cross coupling of the time second derivative of the LDR power transistor gate and drain voltages along with their currents. This technique keeps low values of these currents in order of nano or hundreds of micro amperes for undershot or overshot cases, respectively. The introduced methodology has been applied to a standard CMOS of 0.18μm technology for NMOS transistors and validated using MATLAB R2014a.

Author Biographies

Mohamed Bakry El_Mashade, Electrical Engineering Dept., Al_Azhar University, Nasr City, Cairo, Egypt

Electrical Engineering Dept., Al_Azhar University, Nasr City, Cairo, Egypt

Ahmed Abd_Monem Afifi, Department of Electrical Engineering and computer, Higher Technological Institute, 10th of Ramadan city, Egypt

Department of Electrical Engineering and computer, Higher Technological Institute, 10th of Ramadan city, Egypt

Tayel Dabbous, Department of Electrical Engineering and computer, Higher Technological Institute, 10th of Ramadan city, Egypt

Department of Electrical Engineering and computer, Higher Technological Institute, 10th of Ramadan city, Egypt

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Published

2024-04-19

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Section

Microelectronics, nanoelectronics