A New Design Methodology For Enhancing The Transient Loading Of Low Drop-out Regulators (LDRs)

Mohamed Bakry El_Mashade, Ahmed Abd_Monem Afifi, Tayel Dabbous

Abstract


A new simple design methodology which makes LDR output nearly insensitive to jumps of the load current for long times is proposed. This methodology is tested for more than 104 seconds. Our procedure leans on cross coupling of the time second derivative of the LDR power transistor gate and drain voltages along with their currents. This technique keeps low values of these currents in order of nano or hundreds of micro amperes for undershot or overshot cases, respectively. The introduced methodology has been applied to a standard CMOS of 0.18μm technology for NMOS transistors and validated using MATLAB R2014a.

Full Text:

PDF

References


Laude Fernandez, Andres Amaya and Elkim Roa, “A 0.007mm2 SOmA Three-Stage Fully-Integrated Capacitor-Less Low-Dropout Regulator,” IEEE International Symposium on Circuits and Systems (ISCAS), 2018.

Chenchang Zhan, and Wing-Hung Ki, “An Output-Capacitor-Free Adaptively Biased Low-Dropout Regulator With Subthreshold Undershoot-Reduction for SoC,” IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I, VOL. 59, NO. 5, pp. 1119–1131, MAY 2012.

C.-H. Wu L.-R. Chang-Chien, “Design Of the Output-Capacitorless Low-Dropout Regulator For Nano-Second Transient Response,” IET Power Electronics, VOL. 5, Iss. 8, pp. 1551–1559, 2012.

Marco Ho, and Ka Nang Leung, “Dynamic Bias-Current Boosting Technique for Ultralow-Power Low-Dropout Regulator in Biomedical Applications,” IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II, VOL. 58, NO. 3, pp. 174–178, MARCH 2011.

Chen Zheng, and Dongsheng Ma, “Design Of Monolithic CMOS LDO Regulator With D2 Coupling And Adaptive Transmission Control For Adaptive Wireless Powered Bio-Implants,” IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I, VOL. 58, NO. 10, pp. 2377–2387, OCTOBER 2011.

Xin Ming, Ze-kun Zhou, and Bo Zhang, “A Low-Power Ultra-Fast Capacitor-Less LDO With Advanced Dynamic Push-Pull Techniques,” IEEE/IFIP 19th International Conference On VLSI And System-On-Chip, 2011.

Mortaza Mojarad and Mohammad Yavari, “A Novel Frequency Compensation Scheme For On-Chip Low-Dropout Voltage Regulators,” IEEE International Conference on Electronics, Circuits, and Systems, 2011

Edward N. Y. Ho and Philip K. T. Mok, “Design Optimization of an Output Capacitor-Less Low Dropout Regulator with Compensation Capacitance Reduction and Slew-Rate Enhancement Technique,” IEEE International Symposium of Circuits and Systems (ISCAS), 2011

Chenchang Zhan and Wing-Hung Ki, “An Adaptively Biased Low-Dropout Regulator with Transient Enhancement,” Asia and South Pacific Design Automation Conference (ASP-DAC), 2011

H. Wang, T.-L. Chen, and G. Gildenblat, “Quasi-static and nonquasistatic compact MOSFET models based on symmetric linearization of the bulk and inversion charges,” IEEE Trans. Electron Devices, vol. 50, no. 11,pp. 2262–2272, Nov. 2003.

A. S. Roy, J. M. Vasi, and M. B. Patil, “A new approach to model nonquasi-static (NQS) effects for MOSFETs—Part I: Large-signal analysis, ”IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2393–2400,Dec. 2003.

Charge-Based MOS Transistor Modeling, The EKV Model for Low-Power and RFIC Design, John Willey and Sons, 2006, CHRISTIAC.ENZ and ERIC.A.VITTOZ.

A. J. Scholten, L. F. Tiemeijer, P.W. H. de Vreede, and D. B.M. Klaassen,“A large signal non-quasi-static MOS model for RF circuit simulation,” in IEDM Tech. Dig., 1999, pp. 163–166.

VIRTUOSO Simulator Circuit Components and Devices Models Manual, CADANCE, Product Version 7.2, May 2010.

http://ekv.epfl.ch/page-44591-en.html


Refbacks

  • There are currently no refbacks.


International Journal of Electronics and Telecommunications
is a periodical of Electronics and Telecommunications Committee
of Polish Academy of Sciences

eISSN: 2300-1933